Monte Carlo estimation of avalanche noise in thin p+-i-n+ GaAs diodes
- 12 January 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (2) , 232-234
- https://doi.org/10.1063/1.120695
Abstract
We use a Monte Carlo model to investigate the improvement of avalanche noise performance in thin p+-i-n+ GaAs diodes. The model predicts a decrease in avalanche noise as the multiplication length decreases from 1.0 to 0.05 μm, in good agreement with recent experimental measurements. Our simulations suggest that electron initiated multiplication in short devices has inherently reduced noise despite higher feedback from hole ionization, as compared to long devices. This low noise behavior results from the narrower ionization probability distribution and larger dead space effect as a higher operating electric field needed in short devices.Keywords
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