High-speed, short-channel polycrystalline silicon thin-film transistors
- 7 January 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (2) , 293-295
- https://doi.org/10.1063/1.1639137
Abstract
Results are presented on the performance of low-temperature, short-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs), with channel length down to 0.5 μm, and scaled gate oxide thickness down to 20 nm. Good TFT switching characteristics were obtained, and the uniformity of short-channel TFTs was shown to have a standard deviation of better then 10%, even for channel widths as small as 4 μm. The 0.5 μm TFTs have been incorporated into a 15-stage complementary pair metal-oxide-Si transistor ring oscillator, which, at a supply voltage of 3 V, operated with a delay/stage of ∼0.1 ns.Keywords
This publication has 1 reference indexed in Scilit:
- Surface-scattering effects in polycrystalline silicon thin-film transistorsApplied Physics Letters, 2003