Homogeneous Impurity Incorporation during Crystal Growth from the Melt

• 1 January 1969
• journal article
• Published by The Electrochemical Society in Journal of the Electrochemical Society
• Vol. 116  (4) , 511-513
• https://doi.org/10.1149/1.2411933

Abstract

Keywords

• CRYSTAL GROWTH FROM MELT
• SEMICONDUCTOR DOPING
• III-V SEMICONDUCTORS
• IMPURITY DISTRIBUTION
• CRYSTAL ORIENTATION