Implications of velocity overshoot in heterojunction transit-time diodes
- 7 July 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (14) , 510-512
- https://doi.org/10.1049/el:19830347
Abstract
The influence of transient transport in heterojunction transittime is discussed. It is argued that overshoot effects can be important in such devices, in which case the presence of the overshoot will significantly impact device design. Appropriately designed structures are predicted to be superior to their homojunction counterparts, particularly at millimetre wavelengths.Keywords
This publication has 1 reference indexed in Scilit:
- Transient Response of Electron Transport in GaAs Using the Monte Carlo MethodPublished by Elsevier ,1982