Area selective deposition of gold on silicon surface patterned by tip-induced anodization in scanning probe microcopy

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Abstract
The difference in chemical reactivity between silicon (Si) and anodic oxide surfaces was used to fabricate gold (Au) nanostructures. By means of scanning tunneling microscope tip-induced anodization, a Si surface terminated with hydrogen (Si–H) was patterned with the anodic oxide. Subsequently, the patterned sample was treated in an electroless plating bath to deposit Au on it. Using a scanning electron microscope, an energy dispersion x-ray spectroscope, and an atomic force microscope, we confirmed that the Au deposition selectively occurred on the Si–H surface where it was not anodized. The anodic oxide surface served as a mask to prevent Au deposition. Au lines of less than 200 nm in width could be fabricated on the Si–H surface.

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