Scalable RF Si MOSFET distributed lumped elementmodel based on BSIM3v3
- 6 November 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (23) , 1992-1993
- https://doi.org/10.1049/el:19971316
Abstract
A scalable distributed lumped element network model for Si MOSFETs is developed for RF power amplifier design. The model is based on BSIM3v3 developed by UC Berkeley and lossy transmission lines; s-parameter measurement up to 6 GHz and power measurement at 900 MHz are used for model validation.Keywords
This publication has 1 reference indexed in Scilit:
- A new empirical large signal model for silicon RF LDMOS FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002