A memory device utilizing the storage of Abrikosov vortices at an array of pinning sites in a superconducting film

Publisher Website
Google Scholar
Abstract
A non‐destructive readout (NDRO) random access memory based on the use of a two‐dimensional array of strong pinning sites in a film in the mixed state is proposed. Information is stored as the off‐center displacement of vortices in overlay films. The overlay films are electrodes of a Josephson junction, which detects the position of the vortex by means of the critical current suppression.

This publication has 0 references indexed in Scilit: