Growth of Hg 1-x Cd x Te-epitaxial Layers By A Multi-Slice LPE Apparatus
- 22 November 1986
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 659, 110-115
- https://doi.org/10.1117/12.938546
Abstract
Hgl-xCdxTe-layers have been grown on CdTe- and Cdi_yZnyTe-substrates by liquid-phase-epitaxy from a Te-rich solution in a vertical dipping system. This technique allows a series of layers to be grown simultaneously. Throughput and quality of the layers obtained are well suited for production of photovoltaic IR-detectors and renders this technique a promising alternative to bulk growth.Keywords
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