Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A) , L2316
- https://doi.org/10.1143/jjap.28.l2316
Abstract
A photo-assisted plasma CVD method was developed to deposit high quality silicon nitride films. Nitrogen gas excited in a high density plasma kept apart from a wafer was effectively transported to the deposition chamber under the Knudsen pressure region and reacted with silane gas to generate intermediates. The adsorbed intermediates on the wafer were photo-excited to produce silicon nitride film. Silicon nitride films with the hydrogen content of 3–7 atm%, the density of 2.9–3.3 g/cm3, the tensile stress of 0.5–3.0×109 dyn/cm2 and the Si/N composition of 0.75 were successfully deposited at 300°C.Keywords
This publication has 3 references indexed in Scilit:
- Stress Induced Voids in Aluminum Interconnects During IC Processing8th Reliability Physics Symposium, 1985
- Properties of Plasma‐Deposited Silicon NitrideJournal of the Electrochemical Society, 1979
- Reactive Plasma Deposited Si-N Films for MOS-LSI PassivationJournal of the Electrochemical Society, 1978