Depletion-mode IGFET made by deep ion implantation

• 1 March 1973
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 20  (3) , 283-289
• https://doi.org/10.1109/t-ed.1973.17641

Abstract

Keywords

• IMPLANTATION
• LOAD
• DEPLETION
• FABRICATED
• MODE IGFET MADE
• MADE BY DEEP