Defects in Semiconductors: Recent Progress in Positron Experiments

• 1 November 1994
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 175-178, 47-58
• https://doi.org/10.4028/www.scientific.net/msf.175-178.47

Abstract

Keywords

• ALXGA1-XAS
• DX CENTER
• EL2 DEFECT
• GAAS
• POSITRON DIFFUSION COEFFICIENT
• POSITRON MOBILITY
• POSITRON TRAPPING COEFFICIENT
• VACANCIES IN GAAS