AlGaAs/GaAs multiquantum-well (MQW) laser applied to monolithic integration with FET driver

24 November 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (24) , 1020-1021
https://doi.org/10.1049/el:19830691

Abstract

A ridge-waveguide AlGaAs/GaAs multiquantum-well (MQW) laser has been monolithically integrated with two MESFETs on a semi-insulating GaAs substrate. The laser was grown in an etched groove to realise a nearly planar horizontal arrangement with FETs. This MQW laser was found to successfully achieve a CW operation with a lowthreshold current of 20 mA at room temperature.

Keywords

MONOLITHIC INTEGRATION
MQW LASER
PLANAR HORIZONTAL ARRANGEMENT
ALGAAS/GAAS MULTIQUANTUM-WELL LASER
OPTOELECTRONIC INTEGRATED CIRCUIT
SEMICONDUCTOR LASER
MESFETS
RIDGE-WAVEGUIDE
THRESHOLD CURRENT
FET DRIVER
CW OPERATION
SEMIINSULATING GAAS SUBSTRATE

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