Interactions between implanted Mg and base p-type dopant (Be,Zn,C) in heterojunction bipolar transistor devices
- 1 June 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (11) , 5694-5698
- https://doi.org/10.1063/1.351355
Abstract
The interactions, in GaAlAs/GaAs heterojunction bipolar transistor structures, between implanted Mg atoms and different p‐type base dopants (Be in layers grown by molecular beam epitaxy, Zn or C in layers grown by organometallic chemical vapor deposition) have been investigated. Different diffusion behaviors have been observed, according to the base dopant, either for the implanted Mg or for the base dopant itself. The resultant hole concentration profile obtained with a C–V electrochemical profiler has also been studied as a function of the base p‐type dopant.This publication has 20 references indexed in Scilit:
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