Formation of a nearly pure aluminum layer in beryllium using ion implantation
- 23 January 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (4) , 326-328
- https://doi.org/10.1063/1.100977
Abstract
A nearly pure subsurface layer of an implanted element was created using aluminum implantation into beryllium. In particular, post-implant annealing of polycrystalline beryllium samples implanted with 200 keV aluminum caused a dramatic increase in the peak aluminum concentration as determined by Rutherford backscattering. The effect was observed for all three doses studied: 0.46, 1.1, and 4.6×1018 Al/cm2 . For the 1.1×1018 Al/cm2 case, cross-sectional transmission electron microscopy of the annealed sample revealed a distinct subsurface layer with the structure of crystalline aluminum. Auger sputter profiles of individual grains showed the layer purity to be as high as 98 at. % aluminum. However, there were indications that the layer formation and/or purity were grain dependent.Keywords
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