Effects of modified collector boundary conditions on the basic properties of a transistor
- 31 December 1963
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 6 (6) , 573-588
- https://doi.org/10.1016/0038-1101(63)90053-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Determination of physical parameters of diffusion and drift transistorsIRE Transactions on Electron Devices, 1961
- A Modification of the Theory of the Variation of Junction Transistor Current Gain with Operating Point and Frequency†Journal of Electronics and Control, 1959
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949