Spin-based quantum gating with semiconductor quantum dots

Preprint

27 April 2003

preprint
Published by arXiv in arXiv

Abstract

We propose a potential scheme for realizing a two-qubit quantum gate in semiconductor quantum dots. Information is encoded in the spin degrees of freedom of one excess conduction electron of each quantum dot. The proposed gate is based on properly tailored ultrafast laser pulses and exploits both Pauli-blocking effect and dipole-dipole coupling between intermediate excitonic states.

Keywords

SEMICONDUCTOR QUANTUM DOTS
GATING WITH SEMICONDUCTOR
ULTRAFAST LASER
QUANTUM GATING
BASED QUANTUM
SPIN BASED
EXCITONIC

All Related Versions

Version 1, 2003-04-27, ArXiv
Version 2, 2003-07-21, ArXiv
Version 3, 2004-02-06, ArXiv
Version 4, 2004-04-13, ArXiv
Published version: Europhysics Letters, 66 (1), 14.

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