Magnetization, strain, and anisotropy field of Ne+ and H+ ion-implanted layers in bubble garnet films

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Abstract
The effects of the implantation dose and annealing on magnetization (4πMs), lattice constant strain (Δd/d), and change in the anisotropy field (ΔHK) of a layer implanted with Ne+ or H+ ions in bubble garnet films have been investigated using a vibrating sample magnetometer (VSM), the double crystal x‐ray technique, and ferromagnetic resonance measurements. The magnetic and crystalline properties of Ne+ or H+ ion‐implanted layers were quite different. Saturation magnetization of the H+ ion‐implanted layer decreased gradually with Δd/d beyond 1%, while that of the Ne+ ion‐implanted layer decreased abruptly above 1%. ΔHK of the Ne+ ion‐implanted layer was proportional to Δd/d up to a saturation point of about 1%; however, ΔHK of the H+ ion‐implanted layer continued to increase after Δd/d passed 1%. The other distinct difference between the H+ and Ne+ ion‐implanted specimens was the temperature necessary to obtain annealing effects. In the H+ ion‐implanted layer, annealing in the lower (around 200 °C) temperature range had a relatively larger effect on 4πMs and ΔHK than with the Ne+ ion‐implanted layer.