Deep-level analysis in (AlGa)As—GaAs 2-D electron gas devices by means of low-frequency noise measurements
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (1) , 9-11
- https://doi.org/10.1109/EDL.1984.25812
Abstract
Low-frequency noise of (AlGa)As-GaAs heterostructures grown by molecular-beam epitaxy was investigated. The temperature of the samples was varied between 100 and 400 K. In the frequency range from 1 Hz to 25 kHz noise spectra can be described as superposition of several generation-recombination (GR) noise components. Four deep levels (E = 0.40, 0.42, 0.54, 0.60 eV) were detected, three of which are in agreement with those measured independently by deep-level transient spectroscopy (DLTS).Keywords
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