Thin film interaction between Ti and boron‐implanted silicon substrates at 650°–900°C was investigated. The compositional properties were examined with Rutherford backscattering spectrometry and secondary ion mass spectrometry, the structural properties with x‐ray diffraction, and the electrical properties with sheet resistance measurements. At 650°C, incomplete Ti/Si reaction led to significant amounts of intermediate silicide phases ( and ) and hence higher sheet resistance. Annealing at 700°C or higher resulted in conversion of the titanium film into predominantly and a lower sheet resistance. Boron was found to redistribute into the silicide layer during annealing, leading to an accumulation on the surface and a depletion at the silicide/silicon interface. The diffusion kinetics of boron through titanium silicide are compared with those of other p‐ and n‐type dopants.