Computer-simulation studies of extrinsic defects incrystals
- 1 September 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (10) , 4877-4883
- https://doi.org/10.1103/physrevb.44.4877
Abstract
In this paper we report our results of atomistic-simulation studies concerning the incorporation of impurity ions into crystals. We show that the incorporation of impurity ions into the lattice must involve intrinsic defects, which result mainly from the observed O deficiency in crystals. Divalent and also trivalent ions are predicted to substitute intrinsically present -antisite defects; i.e., these impurities will finally occupy Li sites. For incorporation we are able to compare calculated solution mechanisms with experimentally obtained results.
Keywords
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