Lock-on effect in GaAs photoconductive switches

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Abstract
The lock-on effect observed in high power, light-activated GaAs bulk switches is very important in determining the GaAs power device performance. An analytical model to explain the physical origin of this effect is presented. In this model, negative resistance associated with transferred-electron effect creates high-field-induced avalanche injection at the anode contact. A regional approximation is used to calculate the field distribution in the device and to derive the device f-V characteristics. Reported experimental results are in good agreement with the model over a wide range of device parameters.

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