Characterization of simultaneous bulk and interface high-field trapping effects in SiO2

1 January 1983

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1983.190471

Abstract

A combined C-V, I-V measurement method is used to detect and characterize the simultaneous effects of several types of high field trapping phenomena in polysilicon-oxide-silicon capacitors. The experimental results show that both positive and negative charges are produced in the oxide but with different spatial distributions and time constants and that interface states are generated.

Keywords

ELECTRON TRAPS
THRESHOLD VOLTAGE
CAPACITANCE-VOLTAGE CHARACTERISTICS
CURRENT MEASUREMENT
ELECTRIC BREAKDOWN
SHAPE MEASUREMENT
MOS CAPACITORS
INTERFACE STATES
CHARGE MEASUREMENT
TUNNELING

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