Modeling of beam voltage effects in electron-beam annealing

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Abstract
Beam penetration effects can be important if accurate estimates are to be made of the temperature rise in electron beam annealing of silicon. This is because the electron penetration is typically much larger than the thickness of the layer to be annealed. Depth deposition curves and radial energy spread functions are calculated in silicon for beam energies of 5, 10, 15, 20, and 30 keV. Using the image method, the results are applied to calculate temperature profiles for planar beams of infinite extent and for finite beams with Gaussian cross section.

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