Mushroom-shaped gates defined by e-beam lithography down to 80-nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess

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Abstract
Sub-0.1 micrometers mushroom-shaped gates (T-gates) have been realized with a three-layer resist technique using e-beam exposure. The exposure was carried out on a Philips EPBG-3 system operating at 50 kV. The resist system and writing strategy were investigated. Test exposures on SiN-capped GaAs wafers with ohmic contacts having the same topography as active devices were carried out. Using this T-gate lithography, pseudomorphic AlGaAs/InGaAs/GaAs HEMTs were fabricated. These devices have transit frequencies of 120 GHz.

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