Continuous wave operation of ridge waveguide AlGaAs/GaAs distributed feedback lasers with low threshold current
- 6 January 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (1) , 4-6
- https://doi.org/10.1063/1.96758
Abstract
Ridge waveguide AlGaAs/GaAs distributed feedback lasers were fabricated by a two-step molecular beam epitaxial growth technique. A threshold current as low as 42 mA, which is the lowest ever reported, was obtained under a continuous wave condition at room temperature. Stable single longitudinal mode oscillation was observed in the temperature range from −20 to 30 °C without any suppression of the Fabry–Perot mode.Keywords
This publication has 7 references indexed in Scilit:
- Low threshold current AlGaAs/GaAs distributed feedback laser grown by two-step molecular beam epitaxyApplied Physics Letters, 1985
- Analysis of the spectral linewidth of distributed feedback laser diodesElectronics Letters, 1984
- GaAs/AlGaAs distributed feedback-transverse junction stripe laser using a hybrid liquid phase epitaxy/metal-organic chemical vapor deposition growth techniqueJournal of Applied Physics, 1981
- cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 KApplied Physics Letters, 1975
- Room-temperature operation of low-threshold separate-confinement heterostructure injection laser with distributed feedbackApplied Physics Letters, 1975
- GaAs–Ga1−xAlxAs double-heterostructure distributed-feedback diode lasersApplied Physics Letters, 1974
- Distributed-feedback single heterojunction GaAs diode laserApplied Physics Letters, 1974