Microstructural change of nano-SnO2grain assemblages with the annealing temperature

Abstract
The microstructural changes of nano-SnO2 have been systematically studied using x-ray diffraction and Raman spectroscopy. The nano-SnO2 grain assemblage possesses some features of the rutile structure, but has a large amount of defects: vacancies of oxygen, vacancy clusters, and local lattice disorder at the interface and interior surface, which lead to a significant lattice distortion and an evident space-symmetry reduction of D4h14 and the appearance of a group of new Raman peaks. Two major Raman peaks N1 and N2 in accordance with Matossi's force constant model have been found. When the annealing temperature is close to 673 K, the density of vacant lattice sites and local lattice disorders decreased rapidly in the grains, and the lattice distortion and Raman peaks N1 and N2 almost disappeared at the same time. It suggests that N1 and N2 are closely related to the microstructural change of the nanocluster grains, or in other words, N1 and N2 peaks mark an additional characteristic of space symmetry of the grain assemblage of nano-SnO2. The Raman peak N3 may be related to local SnO2 clusters and vacancy clusters.