DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON MICROSCOPY
- 1 June 1979
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 40 (C6) , C6-11
- https://doi.org/10.1051/jphyscol:1979603
Abstract
The configuration of dislocations in semiconductors as revealed by the weak-beam method of electron microscopy is discussed. The dissociation of these dislocations has been clearly established, but while many earlier questions concerning the dislocation geometries have been resolved, new dislocation geometries have been revealed which are as yet unexplainedKeywords
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