Coupling mechanism of gain-guided integrated semiconductor laser arrays
- 15 February 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (4) , 389-391
- https://doi.org/10.1063/1.94784
Abstract
It is shown that a gain-guided laser array couples via propagating fields rather than the evanescent mode coupling typically responsible for directional coupling in passive (directional couplers) and active (laser array) devices. We show that these phase-locked modes exhibit an interference pattern, in the junction plane, which arises from the curvature of the phase fronts of optical fields of the interacting lasers. The experimental results are interpreted with the aid of a simple theoretical model, and the effect of the observed mode pattern on the coupling of gain-guided lasers is discussed.Keywords
This publication has 11 references indexed in Scilit:
- Longitudinal-mode control in integrated semiconductor laser phased arrays by phase velocity matchingApplied Physics Letters, 1984
- Phase-locked semiconductor laser array with separate contactsApplied Physics Letters, 1983
- Control of mutual phase locking of monolithically integrated semiconductor lasersApplied Physics Letters, 1983
- Transient single-longitudinal mode stabilization in double active layer GaInAsP/InP laser under high-bit rate modulationApplied Physics Letters, 1983
- Phase-locked (GaAl)As laser emitting 1.5 W cw per mirrorApplied Physics Letters, 1983
- High-power leaky-mode multiple-stripe laserApplied Physics Letters, 1981
- Experimental and analytic studies of coupled multiple stripe diode lasersIEEE Journal of Quantum Electronics, 1979
- A densely packed monolithic linear array of GaAs-AlxGa1−xAs strip buried heterostructure laserApplied Physics Letters, 1979
- Non-Gaussian fundamental mode patterns in narrow-stripe-geometry lasersApplied Physics Letters, 1978
- Gain−induced guiding and astigmatic output beam of GaAs lasersJournal of Applied Physics, 1975