Large Pairing Jahn-Teller Distortions Around Divacancies in Crystalline Silicon
- 8 November 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 83 (19) , 3852-3855
- https://doi.org/10.1103/physrevlett.83.3852
Abstract
Ab initio atomic and electronic structures of neutral and charged Si divacancies are investigated using bulk-terminated clusters with up to Si atoms. For the first time, the relaxed structures for , , and are found to exhibit large pairing Jahn-Teller distortions consistent with electron paramagnetic resonance experiments. Atomic relaxations, Jahn-Teller and relaxation energies, and hyperfine parameters are calculated for various charge states and compared with available experimental data. The cluster size and the anisotropic nature of the relaxations play key roles in establishing the stability of the structures with large pairing distortions.
Keywords
This publication has 16 references indexed in Scilit:
- Spin-density study of the silicon divacancyPhysical Review B, 1998
- First-principles study of the structure and energetics of neutral divacancies in siliconPhysical Review B, 1996
- Saito and Oshiyama Reply:Physical Review Letters, 1995
- Comment on “Resonant Bonds in Symmetry-Lowering Distortion around a Silicon Divacancy”Physical Review Letters, 1995
- Resonant Bonds in Symmetry-Lowering Distortion around a Si DivacancyPhysical Review Letters, 1994
- Finite-difference-pseudopotential method: Electronic structure calculations without a basisPhysical Review Letters, 1994
- Fully relaxed point defects in crystalline siliconPhysical Review B, 1993
- Efficient pseudopotentials for plane-wave calculationsPhysical Review B, 1991
- Ground State of the Electron Gas by a Stochastic MethodPhysical Review Letters, 1980
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965