Analytic Expressions for the Critical Charge in CMOS Static RAM Cells
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4616-4619
- https://doi.org/10.1109/TNS.1983.4333183
Abstract
Common trajectories associated with logic state reversal are discussed, and an analytical expression is developed for the critical charge required for single event upset of CMOS static RAMs.Keywords
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