Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

Preprint

11 October 2001

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0110240

Abstract

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K.

Keywords

INJECTED SPIN POLARIZATION
ELECTRICAL SPIN
FERROMAGNETIC
ELECTRON SPIN
RELIABLE
AL2O3
GAAS

All Related Versions

Version 1, 2001-10-11, ArXiv
Published version: Applied Physics Letters, 81 (2), 265.

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