Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing

• 1 February 1998
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 264-268, 869-872
• https://doi.org/10.4028/www.scientific.net/msf.264-268.869

Abstract

Keywords

• C-V CHARACTERISTICS
• INTERFACE STATES (OR TRAPS)
• NITRIDATION
• OXIDE
• OXIDE CHARGE