Analysis of defect-assisted tunneling based on low frequency noise measurements of resonant tunnel diodes
- 1 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1551-1555
- https://doi.org/10.1016/0038-1101(89)90272-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Analysis of localized levels in semiconducting CdS from generation–recombination noise spectraPhysica Status Solidi (a), 1977
- Semiconductor impurity analysis from low-frequency noise spectraIEEE Transactions on Electron Devices, 1971
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970
- Excess Noise in Narrow Germanium p-n JunctionsJournal of the Physics Society Japan, 1958