Selective Deposition of Diamond Films on Ion‐Implanted Si(100) by Microwave Plasma Chemical Vapor Deposition

1 November 1992

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 139 (11) , 3255-3258
https://doi.org/10.1149/1.2069062

Abstract

Enhanced nucleation density of diamond deposition on ion‐implanted Si(100) substrate without diamond abrasive pretreatment has been achieved for the first time. The optimum experimental parameters used to achieve good selectivity of diamond on implanted Si(100) were 100 keV P⁺ ion with a dose range between 10¹⁴ cm⁻² and 10¹⁵ cm⁻². Selectivity of diamond deposition also depended on thickness of the film, which was used as a mask to prevent the Si(100) surface from ion‐implantation induced damages. The effects of ion species, ion energy, ion dosage, and annealing temperature on the selective deposition of diamond films also have been discussed.

Keywords

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