Evidence for a large correlation length in surface roughness ofCoSi2/Si
- 15 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (7) , 3929-3931
- https://doi.org/10.1103/physrevb.45.3929
Abstract
We present data on parallel electric transport in thin /Si and Si//Si layers from 50 down to 12 Å. The data show that the surface roughness must be described by a large correlation length ξ, i.e., much larger than , where is the Fermi wave vector equal to 1 Å in . This is true whatever the model (Gaussian or exponential) used for the autocorrelation function. For /Si and Si//Si films we obtain, respectively, ξ=5 and 8 Å in the Gaussian model and 10 and 12 Å in the exponential one.
Keywords
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