Evaluation of Transport Integrals for Mixed Scattering and Application to Galvanomagnetic Effect

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Abstract
The Johnson-Whitesell evaluations of the conductivity integrals for mixed scattering have been extended over larger ranges of magnetic field and impurity scattering parameters to allow their application to the high-mobility semiconductors. Values are given for the first thermoelectric integral. Use of the magnetic field dependence of galvanomagnetic and thermomagnetic properties to study charge-carrier scattering is discussed. Applications of the functions in the analysis of Hall effect, Corbino magnetoresistance, and thermomagnetic phenomena as functions of magnetic field are illustrated.