A 1.5 Gbit/s GaAs four-channel selector LSI with monolithically integrated newly structured GaAs ohmic contact MSM photodetector and laser driver
- 1 October 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 1 (10) , 310-312
- https://doi.org/10.1109/68.43358
Abstract
A monolithic integrated 1.5 Gb/s high-speed four-channel optoelectronic integrated circuit (OEIC) selector GaAs LSI circuit is discussed. This LSI circuit incorporates photodetectors, preamplifiers, a selector, a decision circuit, and a high-speed laser driver. To achieve high efficiency, a AuGe/Ni-GaAs structured ohmic contact metal-semiconductor-metal (OC-MSM) is used for the interdigitated structural photodetector. With this OC-MSM structure, photocurrent is approximately twice as effective as with the conventional Schottky contact MSM structure. The new LSI has a maximum operating speed of 1.5 Gb/s and exhibits low power dissipation of 927 mW.Keywords
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