n-channel formation on semi-insulating InP surface by m.i.s.f.e.t.
- 8 November 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (23) , 743
- https://doi.org/10.1049/el:19790531
Abstract
InP m.i.s.f.e.t.s using Fe-doped semi-insulating material surface have been fabricated. The devices, composed of sulphur-diffused n-type source and drain and c.v.d. Al2O3 gate insulator, exhibited n-channel normally-off behaviour and a source drain capacitance two orders of magnitude smaller than that of p-InP m.i.s.f.e.t.s with the same dimensions.Keywords
This publication has 1 reference indexed in Scilit:
- A K-band GaAs FET with 2.5 dB noise figure at 18 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977