Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding
- 21 November 2002
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 38 (24) , 1539-1541
- https://doi.org/10.1049/el:20021080
Abstract
A GaAs-based quantum cascade laser utilising lattice matched Ga0.51In0.49P waveguide cladding is reported. Room temperature operation at a wavelength λ≃9.8 µm has been demonstrated, with threshold current densities ∼6 kAcm−2 at 12 K rising to ∼37 kAcm−2 at room temperature. A characteristic temperature T0∼105 K was obtained between 210 and 305 K. It is predicted that optimised GaInP waveguides can offer significantly lower loss than those based on either GaAs or AlGaAs.Keywords
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