Properties of Si donors and persistent photoconductivity in AlGaN

This publication has 25 references indexed in Scilit:

• Pressure Induced Deep Gap State of Oxygen in GaN
  Physical Review Letters, 1997
• Sheath Potential in the Accelerating Region of an Electron-Beam-Excited Plasma Apparatus
  Japanese Journal of Applied Physics, 1996
• Doping Studies of n- and p-Type AlxGa1-xN Grown by ECR-Assisted MBE
  MRS Proceedings, 1996
• AlxGa1-xN-Based Materials and Heterostructures
  MRS Proceedings, 1996
• Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE
  MRS Proceedings, 1996
• Persistent Photoconductivity in p-Type GaN Epilayers and n-Type AlGaN/GaN Heterostructures
  MRS Proceedings, 1996
• Persistent Photoconductivity in n-Type GaN
  MRS Proceedings, 1996
• GaN, AlN, and InN: A review
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
• Kinetics of persistent photoconductivity in ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As and ${\mathrm{Zn}}_{0.3}$${\mathrm{Cd}}_{0.7}$Se semiconductor alloys
  Physical Review B, 1992
• Relaxation of stored charge carriers in aZn0.3Cd0.7Se mixed crystal
  Physical Review B, 1990