Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definition
- 11 June 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (24) , 2384-2386
- https://doi.org/10.1063/1.102923
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodesElectronics Letters, 1989
- Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodesElectronics Letters, 1989
- High-efficiency, continuous-wave, epitaxial surface-emitting laser with pseudomorphic InGaAs quantum wellsApplied Physics Letters, 1989
- High-efficiency TEM continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gainApplied Physics Letters, 1989
- Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructureApplied Physics Letters, 1987
- GaInAsP/InP Surface Emitting Injection LasersJapanese Journal of Applied Physics, 1979