Semi‐ab initio tight‐binding band‐structure calculations of χ(3) (− 3ω; ω, ω, ω) in C, Si, Ge, SiC, BP, AIP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb
- 1 April 1991
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 164 (2) , 587-604
- https://doi.org/10.1002/pssb.2221640228
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Measurement of third-order optical nonlinear susceptibility using four-wave mixing in a single-mode ridge waveguideOptics Letters, 1990
- Second-harmonic generation in odd-period, strained, (Si(Ge/Si superlattices and at Si/Ge interfacesPhysical Review Letters, 1990
- Experiment with multiple-quantum-well waveguide switching elementJournal of the Optical Society of America B, 1988
- Empirical tight-binding calculation of dispersion in the second-order nonlinear optical constant for zinc-blende crystalsPhysical Review B, 1987
- Application of the linear-analytic tetrahedra method of zone integration to nonlinear response functionsPhysical Review B, 1987
- Theoretical studies on the dispersion of the nonlinear optical susceptibilities in GaAs, InAs, and InSbPhysical Review B, 1975
- Dispersion of the nonlinear optical susceptibility tensor in centrosymmetric mediaPhysical Review B, 1974
- Anisotropic Interference of Three-Wave and Double Two-Wave Frequency Mixing in GaAsPhysical Review Letters, 1972
- Optical Third-Order Mixing in GaAs, Ge, Si, and InAsPhysical Review B, 1969
- Study of Optical Effects Due to an Induced Polarization Third Order in the Electric Field StrengthPhysical Review B, 1965