Hot hole effects in single barrier p-type GaAs/(AlGa)As/GaAs tunnel structures
- 9 December 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (24) , 3124-3126
- https://doi.org/10.1063/1.105759
Abstract
Oscillatory structure in the low‐temperature current‐voltage characteristics of Be‐doped p‐type GaAs/(AlGa)As/GaAs single barrier tunneling devices is observed. The oscillations have period ΔV=39 mV, close to ℏωL/e, where ℏωL is the longitudinal optic (LO) phonon energy in GaAs. They result from energy relaxation of hot holes injected through the tunnel barrier. The oscillatory amplitude varies as exp(Ea/2kT), where Ea is the ionization energy of the Be acceptors.Keywords
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