Theory of trap filling in Schottky diodes
- 20 June 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (17) , 2341-2349
- https://doi.org/10.1088/0022-3719/14/17/007
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Detailed electrical characterisation of the deep Cr acceptor in GaAsJournal of Physics C: Solid State Physics, 1980
- Thermodynamical analysis of optimal recombination centers in thyristorsSolid-State Electronics, 1978
- Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodesApplied Physics Letters, 1978