Improvement on Intrinsic Electrical Properties of Low-k Hydrogen Silsesquioxane/Copper Interconnects Employing Deuterium Plasma Treatment
- 1 January 2000
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 147 (3) , 1186-4272
- https://doi.org/10.1149/1.1393334
Abstract
Transport phenomena issues that are important in chemical mechanical polishing are identified. A cell model is constructed from first principles which permits the prediction of removal rates of material from a wafer given the operating conditions. Results from the model are illustrated for the polishing of copper films using a slurry containing ferric nitrate. © 1999 The Electrochemical Society. All rights reserved.Keywords
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