D.c. Current-Dependent Faceting of Vicinal Si(111)
- 10 December 1993
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 24 (8) , 653-658
- https://doi.org/10.1209/0295-5075/24/8/006
Abstract
We have studied the step structure of a vicinal Si(111) surface heated by a d.c. current between 1100 K and 1570 K in a synchrotron X-ray scattering experiment. Above 1275 K, a reversible faceting transformation is observed by switching current direction. On faceting the surface transforms from uniform well-ordered steps to extended (111) facets together with extremely disordered step regions. The current direction for which uniform and well-ordered steps are stable reverses above 1500 K.Keywords
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