Electron velocity overshoot in a GaAs-based p-i-n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy
- 18 September 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (12) , 1760-1762
- https://doi.org/10.1063/1.115041
Abstract
We report direct measurements of nonequilibrium electron distributions and electron drift velocities in a GaAs‐based p‐i‐n nanostructure semiconductor by using transient subpicosecond Raman spectroscopy. Experimental conditions are such that the velocity overshoot phenomenon dominates the transport properties of the photoexcited carriers. These experimental results are compared with ensemble Monte Carlo calculations.Keywords
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