Raman microprobe analysis of GaAs wafers
- 2 June 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 103 (1-4) , 54-60
- https://doi.org/10.1016/0022-0248(90)90169-l
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Microtomography observation of precipitates in semi-insulating GaAs materialsJournal of Applied Physics, 1988
- Dislocation loops and precipitates associated with excess arsenic in GaAsJournal of Applied Physics, 1988
- Microdefects in dislocation-free liquid-encapsulated Czochralski GaAsJournal of Applied Physics, 1988
- Infrared laser scanning microscopy in transmission: A new high-resolution technique for the study of inhomogeneities in bulk GaAsApplied Physics Letters, 1987
- Homogeneity qualification of GaAs substrates for large scale integration applicationsApplied Physics Letters, 1986
- Raman microprobe determination of local crystal orientationJournal of Applied Physics, 1986
- Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistorApplied Physics Letters, 1983
- Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutionsJournal of Crystal Growth, 1983
- First-order Raman line intensity ratio in GaAs: a potential lattice perfection scaleJournal of Physics C: Solid State Physics, 1983
- Microscopical techniques in the use of the molecular optics laser examiner Raman microprobeAnalytical Chemistry, 1981