Solid solubility limits in ion-implanted gallium arsenide
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 448-452
- https://doi.org/10.1016/0168-583x(85)90597-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Lattice incorporation of n-type dopants in GaAsApplied Physics Letters, 1982
- Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAsSolid-State Electronics, 1980
- Low-temperature epitaxial regrowth of ion-implanted amorphous GaAsApplied Physics Letters, 1980
- Reordering of implanted amorphous layers in gaasRadiation Effects, 1977
- Effects of Implantation Temperature on Lattice Location of Tellurium Implanted in Gallium ArsenideJapanese Journal of Applied Physics, 1973
- The system Ga–As–Sn: Incorporation of Sn into GaAsJournal of Applied Physics, 1973
- The diffusion of silicon in gallium arsenideSolid-State Electronics, 1965