The constitution of nitrided oxides and reoxidized nitrided oxides on silicon
- 15 July 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (2) , 779-792
- https://doi.org/10.1063/1.336196
Abstract
Chemical analysis has been made of 361-Å thermal oxide films nitrided in ammonia and also subsequently reoxidized in oxygen at 1000 °C, using techniques of ellipsometry and infrared spectrometry. The nitrided film is shown to have a three-layer structure consisting of 22 Å of 48% nitrogen, 334 Å of 17% nitrogen, and 7.4 Å of 100% nitrogen, where the fractions refer to % N/(N+O). After oxidation, the interface layer was unchanged and the surface merged into the bulk, the nitrogen content of which was reduced to 11%. The void content has also been determined.This publication has 19 references indexed in Scilit:
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